Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).Comment: Related papers at http://pettagroup.princeton.ed

InAsSbBi, a direct band-gap, III-V, LWIR material

In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.Comment: Related papers at http://pettagroup.princeton.ed

Correcting for Distortions due to Ionization in the STAR TPC

Physics goals of the STAR Experiment at RHIC in recent (and future) years drive the need to operate the STAR TPC at ever higher luminosities, leading to increased ionization levels in the TPC gas. The resulting ionic space charge introduces field distortions in the detector which impact tracking performance. Further complications arise from ionic charge leakage into the main TPC volume from the high gain anode region. STAR has implemented corrections for these distortions based on measures of luminosity, which we present here. Additionally, we highlight a novel approach to applying the corrections on an event-by-event basis applicable in conditions of rapidly varying ionization sources.Comment: 6 pages, 7 figures, proceedings of the Workshop on Tracking in High Multiplicity Environments (TIME 05) in Zurich, Switzerland, submitted to Nucl. Instr. and Meth.

V1647 Ori (IRAS 05436-0007) in Outburst: the First Three Months

We report on photometric (BVRIJHK) and low dispersion spectroscopic observations of V1647 Ori, the star that drives McNeil's Nebula, between 10 February and 7 May 2004. The star is photometrically variable atop a general decline in brightness of about 0.3-0.4 magnitudes during these 87 days. The spectra are featureless, aside from H-alpha and the Ca II infrared triplet in emission, and a Na I D absorption feature. The Ca II triplet line ratios are typical of young stellar objects. The H-alpha equivalent width may be modulated on a period of about 60 days. The post-outburst extinction appears to be less than 7 mag. The data are suggestive of an FU Orionis-like event, but further monitoring will be needed to definitively characterize the outburst.Comment: Accepted for publication in the Astronomical Journa

Phases in Strongly Coupled Electronic Bilayer Liquids

The strongly correlated liquid state of a bilayer of charged particles has been studied via the HNC calculation of the two-body functions. We report the first time emergence of a series of structural phases, identified through the behavior of the two-body functions.Comment: 5 pages, RevTEX 3.0, 4 ps figures; Submitted to Phys. Rev. Let

Effects of anharmonic strain on phase stability of epitaxial films and superlattices: applications to noble metals

Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%) and Ni/Au (15%). We find that is the elastically soft direction for biaxial expansion of Cu and Ni, but it is for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase-separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along and like in phase-separating systems, while for they behave like in ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents.Comment: RevTeX galley format, 16 pages, includes 9 EPS figures, to appear in Physical Review